Carrier capture and escape in multisubband quantum well lasers

Carrier capture and escape processes between quantum wells and barriers via carrier-polar optical phonon interactions are theoretically studied in multisubband quantum well structures. We find that carriers in each subband have their own minimum capture and escape times when the energy difference be...

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Bibliographic Details
Published in:IEEE photonics technology letters 1994-09, Vol.6 (9), p.1088-1090
Main Authors: Chin-Yi Tsai, Eastman, L.F., Yu-Hwa Lo, Chin-Yao Tsai
Format: Article
Language:English
Subjects:
Carrier confinement
Damping
Energy capture
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
High speed optical techniques
Laser theory
Lasers
Optics
Phonons
Physics
Quantum mechanics
Quantum well lasers
Resonant frequency
Semiconductor lasers
laser diodes
Wave functions
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Summary:Carrier capture and escape processes between quantum wells and barriers via carrier-polar optical phonon interactions are theoretically studied in multisubband quantum well structures. We find that carriers in each subband have their own minimum capture and escape times when the energy difference between the band edges of the subbands and the barrier is equal to the energy of a longitudinal optical phonon. Our results indicate that carrier escape time is more quantum well structure-dependent while carrier capture time is less structure-dependent. Explicit forms for calculating carrier capture and escape times are given which are crucial for designing the quantum well structures with optimal capture or escape efficiencies.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.324677