Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs

A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53

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Bibliographic Details
Main Authors: Dickmann, J., Schildberg, S., Geyer, A., Maile, B.E., Schurr, A., Heuthe, S., Narozny, P.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Electric breakdown
HEMTs
Impact ionization
Indium compounds
Indium gallium arsenide
Lattices
MODFETs
PHEMTs
Temperature
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Description
Summary:A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53
DOI:10.1109/ICIPRM.1994.328238