The influence of gate-metallization potential drop on transient GTO characteristics

A surveillance instrument has been developed for the measurement of the excess-carrier distribution in GTO (gate turn-off thyristor) samples at all stages of operation. The instrument, an optical scanner, allows the visualization of the measurements as 3-D maps of the distributions for time- and spa...

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Bibliographic Details
Main Authors: Bleichner, H., Vobecky, J., Nordlander, E., Vojdani, F., Bakowski, M.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Cathodes
Distributed computing
Instruments
Laser beams
Optical devices
Optical surface waves
Performance evaluation
Surveillance
Thyristors
Online Access:Request full text
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Summary:A surveillance instrument has been developed for the measurement of the excess-carrier distribution in GTO (gate turn-off thyristor) samples at all stages of operation. The instrument, an optical scanner, allows the visualization of the measurements as 3-D maps of the distributions for time- and space-resolved inspections of the electrical behavior of the component. The optical scanner was used to investigate whether the gate-metallization pattern resistance would influence the transient characteristics of the GTO components. The findings clearly show a strong dependence of turn-off behavior on lateral gate-metallization potential drop in a two-fingered structure.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1988.32889