Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's

The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET's (0.1 /spl mu/m). The analysis reveals that the electrical parameter sensitivity in deep...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-11, Vol.41 (11), p.2210-2215
Main Authors: Sitte, R., Dimitrijev, S., Harrison, H.B.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Boron
Circuit simulation
Electronics
Exact sciences and technology
Fluctuations
Implants
Manufacturing
MOSFET circuits
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Threshold voltage
Transistors
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Summary:The effects of typical manufacturing fluctuations upon four electrical device parameters: threshold voltage, transconductance, substrate current and off current have been studied for deep submicron MOSFET's (0.1 /spl mu/m). The analysis reveals that the electrical parameter sensitivity in deep submicron devices differs from micron size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.333843