RF performance of SiC MESFET's on high resistivity substrates

State-of-the art SiC MESFET's showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of...

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Bibliographic Details
Published in:IEEE electron device letters 1994-11, Vol.15 (11), p.458-459
Main Authors: Sriram, S., Clarke, R.C., Burk, A.A., Hobgood, H.M., McMullin, P.G., Orphanos, P.A., Siergiej, R.R., Smith, T.J., Brandt, C.D., Driver, M.C., Hopkins, R.H.
Format: Article
Language:English
Subjects:
Applied sciences
Buffer layers
Crystals
Electronics
Etching
Exact sciences and technology
Fabrication
Fingers
MESFETs
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Substrates
Thermal conductivity
Transistors
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Summary:State-of-the art SiC MESFET's showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described in this paper. These results were obtained by using high-resistivity SiC substrates for the first time to minimize substrate parasitics. The fabrication and characterization of these devices are discussed.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.334666