Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs

0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate FETs is reported for device gate widths of 100 /spl mu/m and 200 /spl mu/m and dev...

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Bibliographic Details
Main Authors: Scherrer, D., Apostolakis, P.J., Middleton, J., Kruse, J., Feng, M.
Format: Conference Proceeding
Language:English
Subjects:
Circuit noise
Current measurement
Equivalent circuits
FETs
Gain
Gallium arsenide
MESFETs
Noise figure
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Summary:0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate FETs is reported for device gate widths of 100 /spl mu/m and 200 /spl mu/m and device bias conditions 0.5 V
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1994.335141