Analysis of color variation in bonded SOI wafers

In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI waf...

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Main Authors: Clapis, P.J., Ledger, A.M., Daniell, K.E.
Format: Conference Proceeding
Language:English
Subjects:
Color
Optical device fabrication
Optical films
Optical sensors
Plasma devices
Plasma materials processing
Plasma properties
Reflectivity
Silicon
Wafer bonding
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creator Clapis, P.J.
Ledger, A.M.
Daniell, K.E.
description In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers.< >
doi_str_mv 10.1109/SOI.1993.344589
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_344589</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>344589</ieee_id><sourcerecordid>344589</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-4c0037a7043b5c858d6492ccedd33ed5d7c02aa50e86474799dadec98b406b523</originalsourceid><addsrcrecordid>eNotj01LAzEUAAMiqLVnwVP-wK4v-142ybEUPwqFHqrn8jbJQmTdSFKU_nsLdS5zGxghHhS0SoF72u82rXIOWyTS1l2JOzAWUCH16kYsa_2EM6TBaXcrYDXzdKqpyjxKn6dc5A-XxMeUZ5lmOeQ5xCDPUfnLYyz1XlyPPNW4_PdCfLw8v6_fmu3udbNebZukgI4NeQA0bIBw0N5qG3pynfcxBMQYdDAeOmYN0fZkyDgXOETv7EDQD7rDhXi8dFOM8fBd0heX0-HyhH_FRECC</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Analysis of color variation in bonded SOI wafers</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Clapis, P.J. ; Ledger, A.M. ; Daniell, K.E.</creator><creatorcontrib>Clapis, P.J. ; Ledger, A.M. ; Daniell, K.E.</creatorcontrib><description>In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers.&lt; &gt;</description><identifier>ISBN: 0780313461</identifier><identifier>ISBN: 9780780313460</identifier><identifier>DOI: 10.1109/SOI.1993.344589</identifier><language>eng</language><publisher>IEEE</publisher><subject>Color ; Optical device fabrication ; Optical films ; Optical sensors ; Plasma devices ; Plasma materials processing ; Plasma properties ; Reflectivity ; Silicon ; Wafer bonding</subject><ispartof>Proceedings of 1993 IEEE International SOI Conference, 1993, p.66-67</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/344589$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/344589$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Clapis, P.J.</creatorcontrib><creatorcontrib>Ledger, A.M.</creatorcontrib><creatorcontrib>Daniell, K.E.</creatorcontrib><title>Analysis of color variation in bonded SOI wafers</title><title>Proceedings of 1993 IEEE International SOI Conference</title><addtitle>SOI</addtitle><description>In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers.&lt; &gt;</description><subject>Color</subject><subject>Optical device fabrication</subject><subject>Optical films</subject><subject>Optical sensors</subject><subject>Plasma devices</subject><subject>Plasma materials processing</subject><subject>Plasma properties</subject><subject>Reflectivity</subject><subject>Silicon</subject><subject>Wafer bonding</subject><isbn>0780313461</isbn><isbn>9780780313460</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj01LAzEUAAMiqLVnwVP-wK4v-142ybEUPwqFHqrn8jbJQmTdSFKU_nsLdS5zGxghHhS0SoF72u82rXIOWyTS1l2JOzAWUCH16kYsa_2EM6TBaXcrYDXzdKqpyjxKn6dc5A-XxMeUZ5lmOeQ5xCDPUfnLYyz1XlyPPNW4_PdCfLw8v6_fmu3udbNebZukgI4NeQA0bIBw0N5qG3pynfcxBMQYdDAeOmYN0fZkyDgXOETv7EDQD7rDhXi8dFOM8fBd0heX0-HyhH_FRECC</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Clapis, P.J.</creator><creator>Ledger, A.M.</creator><creator>Daniell, K.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Analysis of color variation in bonded SOI wafers</title><author>Clapis, P.J. ; Ledger, A.M. ; Daniell, K.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-4c0037a7043b5c858d6492ccedd33ed5d7c02aa50e86474799dadec98b406b523</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Color</topic><topic>Optical device fabrication</topic><topic>Optical films</topic><topic>Optical sensors</topic><topic>Plasma devices</topic><topic>Plasma materials processing</topic><topic>Plasma properties</topic><topic>Reflectivity</topic><topic>Silicon</topic><topic>Wafer bonding</topic><toplevel>online_resources</toplevel><creatorcontrib>Clapis, P.J.</creatorcontrib><creatorcontrib>Ledger, A.M.</creatorcontrib><creatorcontrib>Daniell, K.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Clapis, P.J.</au><au>Ledger, A.M.</au><au>Daniell, K.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis of color variation in bonded SOI wafers</atitle><btitle>Proceedings of 1993 IEEE International SOI Conference</btitle><stitle>SOI</stitle><date>1993</date><risdate>1993</risdate><spage>66</spage><epage>67</epage><pages>66-67</pages><isbn>0780313461</isbn><isbn>9780780313460</isbn><abstract>In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/SOI.1993.344589</doi><tpages>2</tpages></addata></record>
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ispartof Proceedings of 1993 IEEE International SOI Conference, 1993, p.66-67
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Color
Optical device fabrication
Optical films
Optical sensors
Plasma devices
Plasma materials processing
Plasma properties
Reflectivity
Silicon
Wafer bonding
title Analysis of color variation in bonded SOI wafers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T17%3A15%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Analysis%20of%20color%20variation%20in%20bonded%20SOI%20wafers&rft.btitle=Proceedings%20of%201993%20IEEE%20International%20SOI%20Conference&rft.au=Clapis,%20P.J.&rft.date=1993&rft.spage=66&rft.epage=67&rft.pages=66-67&rft.isbn=0780313461&rft.isbn_list=9780780313460&rft_id=info:doi/10.1109/SOI.1993.344589&rft_dat=%3Cieee_6IE%3E344589%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i104t-4c0037a7043b5c858d6492ccedd33ed5d7c02aa50e86474799dadec98b406b523%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=344589&rfr_iscdi=true