Comparative materials characterization of SOI wafers produced by competing technologies

In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were opti...

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Bibliographic Details
Main Authors: Feijoo, D., Mills, A.P., Kortan, A.R., Sapjeta, J.B., Hsieh, C.M., Carver, G.E.
Format: Conference Proceeding
Language:English
Subjects:
Atom optics
Atomic force microscopy
Chemical analysis
Optical materials
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma x-ray sources
Reflectivity
Wet etching
Online Access:Request full text
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Summary:In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were optical-beam-induced reflectance, positron annihilation, atomic force microscopy and X-ray diffractometry.< >
DOI:10.1109/SOI.1993.344603