Concentrator module based on LPE-grown GaAs solar cells

The design of a 62.6 cm/sup 2/ concentrator test module and the results of its outdoor measurements are presented. The module is based on p-AlGaAs/p-GaAs/n-GaAs(substrate) solar cells grown by the LPE etchback-regrowth method. A new concentrator grid design with only 3.3% shadowing is applied to the...

Full description

Saved in:
Bibliographic Details
Main Authors: Blieske, U., Baldus, A., Bett, A., Lutz, F., Nguyen, T., Schetter, Ch, Schitterer, K., Sulima, O.V., Wettling, W.
Format: Conference Proceeding
Language:English
Subjects:
Boats
Epitaxial growth
Etching
Gallium arsenide
Photovoltaic cells
Shadow mapping
Stability
Substrates
Temperature
Zinc
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The design of a 62.6 cm/sup 2/ concentrator test module and the results of its outdoor measurements are presented. The module is based on p-AlGaAs/p-GaAs/n-GaAs(substrate) solar cells grown by the LPE etchback-regrowth method. A new concentrator grid design with only 3.3% shadowing is applied to these solar cells. The module efficiency of 19.1% has been obtained under 851 W/m/sup 2/ direct normal insolation without active cooling and without secondary lenses.< >
DOI:10.1109/PVSC.1993.346999