Investigation of intrinsic defect states in hydrogenated amorphous silicon films using steady-state photoconductivity and sub-bandgap absorption

The density, distribution and nature of intrinsic gap states in a-Si:H films deposited over a wide range of substrate temperatures have been investigated using steady-state photoconductivities and sub-bandgap absorption. The sub-bandgap absorption was obtained using dual beam photoconductivity (DBP)...

Full description

Saved in:
Bibliographic Details
Main Authors: Gunes, M., Li, Y.M., Dawson, R.M.A., Fortmann, C.M., Wronski, C.R.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Amorphous silicon
Electron mobility
Optical films
Photoconductivity
Photonic band gap
Photovoltaic cells
Position measurement
Semiconductor films
Steady-state
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The density, distribution and nature of intrinsic gap states in a-Si:H films deposited over a wide range of substrate temperatures have been investigated using steady-state photoconductivities and sub-bandgap absorption. The sub-bandgap absorption was obtained using dual beam photoconductivity (DBP) measurements and the results were analyzed using a detailed numerical model based on Rose-Simmons-Taylor statistics. This model takes into account the effects of mobility, recombination velocity, position of Fermi level, and the presence of sensitizing states. It is found that there is a large effect of sensitizing states and position of Fermi level on both electron mobility-lifetime products and sub-bandgap photoconductivities used to obtain information about gap states in different films.< >
DOI:10.1109/PVSC.1993.347104