Major improvement in material and device stability of a-Si:H and establishment of high stabilized efficiency of single junction a-Si solar cells

Optimizing PECVD processing has further reduced the structural defects in intrinsic a-Si:H films. Using a proprietary technique, photoconductivity-stable, highly photoelectric-sensitive a-Si i-layers have been fabricated. This improved material has been successfully incorporated into high efficiency...

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Bibliographic Details
Main Authors: Jianping Xi, Tongyu Liu, Iafelice, V., Nugent, M., Si, K., del Cueto, J., Ghosh, M., Kampas, F.
Format: Conference Proceeding
Language:English
Subjects:
Commercialization
Degradation
Laboratories
Large-scale systems
Photovoltaic cells
Photovoltaic systems
Production
Research and development
Stability
Throughput
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Summary:Optimizing PECVD processing has further reduced the structural defects in intrinsic a-Si:H films. Using a proprietary technique, photoconductivity-stable, highly photoelectric-sensitive a-Si i-layers have been fabricated. This improved material has been successfully incorporated into high efficiency single junction solar cell devices with significantly improved stability. At present, a stabilized device efficiency of 7.7% has been established.< >
DOI:10.1109/PVSC.1993.347115