15.9% efficiency for Si thin film concentrator solar cell grown by LPE

A thin film (20 /spl mu/m) monocrystalline silicon layer was grown by liquid phase epitaxy on a silicon substrate. Solar cells with an area of 5/spl times/5 mm/sup 2/ were made from the epitaxial layers and achieved an efficiency of 15.9% at 30 Suns under AM1.5 illumination. The maximum one Sun effi...

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Bibliographic Details
Main Authors: Wagner, B.F., Schetter, C., Sulima, O.V., Bett, A.
Format: Conference Proceeding
Language:English
Subjects:
Crystalline materials
Crystallization
Epitaxial growth
Photovoltaic cells
Semiconductor films
Semiconductor thin films
Silicon
Substrates
Sun
Temperature
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Summary:A thin film (20 /spl mu/m) monocrystalline silicon layer was grown by liquid phase epitaxy on a silicon substrate. Solar cells with an area of 5/spl times/5 mm/sup 2/ were made from the epitaxial layers and achieved an efficiency of 15.9% at 30 Suns under AM1.5 illumination. The maximum one Sun efficiency of these cells was 13.3%. Another approach to produce thin film Si solar cells was to use a recrystallized 30 /spl mu/m thin boron doped CVD Si layer on an oxidized silicon substrate. These cells obtained an efficiency of 6.4% (2 cm/sup 2/, one Sun AM1.5).< >
DOI:10.1109/PVSC.1993.347156