Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs

In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length of 0.25 /spl mu/m and drain-to-source spacing of 5...

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Bibliographic Details
Main Authors: Matloubian, M., Jelloian, L.M., Lui, M., Liu, T., Thompson, M.A.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Current measurement
Electric breakdown
Gallium arsenide
Gold
HEMTs
Indium phosphide
MODFETs
Thermal conductivity
Transconductance
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Summary:In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length of 0.25 /spl mu/m and drain-to-source spacing of 5 /spl mu/m. This is the highest breakdown voltage ever achieved for an InP-based HEMT. For a 50X0.25 /spl mu/m/sup 2/ device with a 2/spl mu/m drain-to-source spacing the typical gate-to-drain breakdown voltage is over 30 V with a current density of 520 mA/mm and a maximum transconductance of more than 570 mS/mm. This is the highest combination of breakdown voltage, current density, and transconductance ever reported for any type of FET.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347251