Profile simulation of plasma enhanced and ECR oxide deposition with sputtering

A new profile simulator for plasma enhanced CVD has been developed which considers both the deposition and sputtering processes needed for interlevel dielectric(ILD) gapfill. The profile simulator is based on a generalized model for the plasma deposition as a function of the ion energy flux. Specifi...

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Bibliographic Details
Main Authors: Chang, C.Y., McVittie, J.P., Li, J., Saraswat, K.C., Lassig, S.E., Dong, J.
Format: Conference Proceeding
Language:English
Subjects:
Backscatter
Dielectrics
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma simulation
Plasma transport processes
Sputter etching
Sputtering
Testing
Online Access:Request full text
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Description
Summary:A new profile simulator for plasma enhanced CVD has been developed which considers both the deposition and sputtering processes needed for interlevel dielectric(ILD) gapfill. The profile simulator is based on a generalized model for the plasma deposition as a function of the ion energy flux. Specifically the simulator has five component processes: 1) LPCVD, 2) ion-induced deposition, 3) sputtering with angle-dependent sputter yield, 4) redeposition of the sputtered material and 5) backscatter deposition. Simulated profiles show good agreement with experimental results on the overhang test structure and the trench.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347266