Fabrication of quantum dots using in-situ etching and regrowth during MBE growth

A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the...

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Bibliographic Details
Main Authors: Der-Cherng Liu, Chien-Ping Lee, Shyi-Long Shy
Format: Conference Proceeding
Language:English
Subjects:
Etching
Fabrication
Gallium arsenide
Holography
Indium gallium arsenide
Lithography
Molecular beam epitaxial growth
Quantum dots
Temperature
US Department of Transportation
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Summary:A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347318