A highly reliable metal-to-metal antifuse for high-speed field programmable gate arrays

This paper describes a novel metal-to-metal antifuse technology for field programmable gate arrays which achieves very high performance and reliability while maintaining full CMOS compatibility. Plasma-CVD SiN with Si/N=1 and Al covered with TiN are used as an antifuse dielectric and electrodes, res...

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Bibliographic Details
Main Authors: Takagi, M.T., Yoshii, I., Ikeda, N., Yasuda, H., Hama, K.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Capacitance
Circuit optimization
Dielectric devices
Electrodes
Field programmable gate arrays
Fuses
Guidelines
Semiconductor device reliability
Virtual manufacturing
Online Access:Request full text
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Summary:This paper describes a novel metal-to-metal antifuse technology for field programmable gate arrays which achieves very high performance and reliability while maintaining full CMOS compatibility. Plasma-CVD SiN with Si/N=1 and Al covered with TiN are used as an antifuse dielectric and electrodes, respectively. This structure allows a desirable characteristics for high-speed FPGAs with off-state reliability of 1.7/spl times/10/sup 5/ years.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1993.347405