Microchannel heat sinks for two-dimensional high-power-density diode laser arrays

• Published in: IEEE journal of quantum electronics 1989-09, Vol.25 (9), p.1988-1992
• Main Authors: Missaggia, L.J., Walpole, J.N., Liau, Z.L., Phillips, R.J.
• Format: Article
• Language: English
• Subjects: 420300 - Engineering- Lasers- (-1989); ARSENIC COMPOUNDS; ARSENIDES; Diode lasers; ELECTRON MULTIPLIERS; ELECTRON TUBES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; ENGINEERING; Exact sciences and technology; Fundamental areas of phenomenology (including applications); GALLIUM ARSENIDES; GALLIUM COMPOUNDS; GALLIUM PHOSPHIDES; HEAT SINKS; INDIUM ARSENIDES; INDIUM COMPOUNDS; Indium phosphide; INDIUM PHOSPHIDES; LASERS; Microchannel; MICROCHANNEL ELECTRON MULTIPLIERS; Optical arrays; Optics; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; Physics; PNICTIDES; POWER DENSITY; Power generation; Resistance heating; SEMICONDUCTOR DEVICES; Semiconductor laser arrays; SEMICONDUCTOR LASERS; Semiconductor lasers; laser diodes; SEMIMETALS; SILICON; SINKS; SOLID STATE LASERS; STIMULATED EMISSION; THERMAL CONDUCTIVITY; Thermal resistance; THERMODYNAMIC PROPERTIES; TWO-DIMENSIONAL CALCULATIONS; Waste heat
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.35223

The operation of a two-dimensional GaInAsP/InP diode laser array with CW power dissipation up to 500 W/cm/sup 2/ into a Si microchannel heat sink is discussed. The approximately 1*4-mm/sup 2/ laser array was used to characterize the heat sink, and the value of 0.040 degrees C cm/sup 2//W was obtained for the thermal resistance per unit area. The extrapolated value for a 1-cm/sup 2/ heated area is 0.070 degrees C cm/sup 2//W.< >