InP/GaInAs composite collector heterostructure bipolar transistors and circuits

The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure t...

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Bibliographic Details
Main Authors: Feygenson, A., Montgomery, R.K., Smith, P.R., Hamm, R.A., Haner, M., Yadvish, R.D., Panish, M.B., Temkin, H., Ritter, D.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Bipolar transistors
Circuits
Doping
Heterojunction bipolar transistors
Indium phosphide
Optical amplifiers
Optical receivers
Scalability
Semiconductor optical amplifiers
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Summary:The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BV/sub CEO/, f/sub T/ of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 db/spl Omega/ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers.< >
DOI:10.1109/ICIPRM.1993.380556