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Advanced millimeter-wave InP HEMT MMICs

InP-based high electron mobility transistors (HEMTs) developed have exhibited state-of-the-art low noise and power performance well up to W-band frequencies. High performance V- and W-band monolithic amplifiers based on these devices have also been developed. A full W-band InP three-stage monolithic...

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Bibliographic Details
Main Authors: Duh, K.H.G., Liu, S.M.J., Kao, M.Y., Wang, S.C., Tang, O.S.A., Ho, P., Chao, P.C., Smith, P.M.
Format: Conference Proceeding
Language:English
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Summary:InP-based high electron mobility transistors (HEMTs) developed have exhibited state-of-the-art low noise and power performance well up to W-band frequencies. High performance V- and W-band monolithic amplifiers based on these devices have also been developed. A full W-band InP three-stage monolithic microwave integrated circuit (MMIC) amplifier yields a measured noise matching and bias decoupling networks. A thorough design and analysis procedure was incorporated, including accurate characterization of the devices and circuit elements at W-band frequencies. The first pass success of these full band MMIC amplifiers indicates the importance of accurate device characterization and thorough circuit designs in millimeter wave monolithic IC development.< >
DOI:10.1109/ICIPRM.1993.380576