A new boron diffusion model incorporating the dislocation loop growth

A new simulation model for boron redistribution incorporating the dislocation loop growth during the post implantation annealing, is proposed. Modeling the capture of point defects and boron-interstitial silicon pair (BI) by the loop allows both the loop growth and the redistribution to be predicted...

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Bibliographic Details
Main Authors: Uwasawa, K., Uchida, T., Ikezawa, T., Hane, M., Matsuki, T., Kato, H., Ishida, K.
Format: Conference Proceeding
Language:English
Subjects:
Bismuth
Boron
Fabrication
Kinetic theory
Microelectronics
MOSFETs
National electric code
Rapid thermal annealing
Silicon
Simulated annealing
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Summary:A new simulation model for boron redistribution incorporating the dislocation loop growth during the post implantation annealing, is proposed. Modeling the capture of point defects and boron-interstitial silicon pair (BI) by the loop allows both the loop growth and the redistribution to be predicted simultaneously and self-consistently, on the basis of non-equilibrium BI diffusion kinetics. The physically based model, using reasonable parameters, reproduces the boron redistribution under various experimental conditions, including the results of non-equilibrium diffusion in very short time annealing after the ion implantation process.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1994.383274