Bootstrapped full-swing BiCMOS/BiNMOS logic circuits for 1.2-3.3 V supply voltage regime

Novel full-swing BiCMOS/BiNMOS logic circuits using bootstrapping in the pull-up section for low supply voltage down to 1 V are reported. These circuit configurations use noncomplementary BiCMOS technology. Simulations have shown that they outperform other BiCMOS circuits at low supply voltage using...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1995-06, Vol.30 (6), p.629-636
Main Authors: Bellaouar, A., Elmasry, M.I., Embabi, S.H.K.
Format: Article
Language:English
Subjects:
Applied sciences
BiCMOS integrated circuits
Bipolar transistors
Circuit properties
CMOS technology
Degradation
Delay
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuit technology
Logic circuits
Low voltage
Portable computers
Power supplies
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Summary:Novel full-swing BiCMOS/BiNMOS logic circuits using bootstrapping in the pull-up section for low supply voltage down to 1 V are reported. These circuit configurations use noncomplementary BiCMOS technology. Simulations have shown that they outperform other BiCMOS circuits at low supply voltage using 0.35 /spl mu/m BiCMOS process. The delay and power dissipation of several NAND configurations have been compared. The new circuits offer delay reduction between 40 and 66% over CMOS in the range 1.2-3.3 V supply voltage. The minimum fanout at which the new circuits outperform CMOS gate is 5, which is lower than that of other gates particularly for sub-2.5 V operation.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.387065