Infrared microscopy studies on high-power InGaAs-GaAs-InGaP lasers with Ga/sub 2/O/sub 3/ facet coatings

• Published in: IEEE journal of selected topics in quantum electronics 1995-06, Vol.1 (2), p.110-116
• Main Authors: Passlack, M., Bethea, C.G., Hobson, W.S., Lopata, J., Schubert, E.F., Zydzik, G.J., Nichols, D.T., de Jong, J.F., Chakrabarti, U.K., Dutta, N.K.
• Format: Article
• Language: English
• Subjects: Coatings; Infrared imaging; Laser transitions; Microscopy; Potential well; Power lasers; Quantum well lasers; Reflectivity; Temperature distribution; Temperature measurement
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/2944.401187

InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (/spl lambda/=0.98 /spl mu/m) with lattice-matched InGaP cladding layers, using a new Ga/sub 2/O/sub 3/ low reflectivity (LR) front-facet coating, are reported. The CW peak power density (17 MW/cm/sup 2/) of 6 /spl mu/m/spl times/750 /spl mu/m ridge-waveguide lasers is limited by thermal rollover, and repeated cycling beyond thermal rollover produced no change in operating characteristics. The high-power temperature distribution along the active stripe has been measured by high-resolution infrared (3-5 /spl mu/m) imaging microscopy. The temperature profile acquired for a very high optical power density P/sub D/=11 MW/cm/sup 3/ was found to be uniform along the inner active laser stripe, and revealed a local temperature increase at the LR front facet /spl Delta/T/sub f/ of only 9 K above the average stripe temperature /spl Delta/T/sub s/=24 K. An excellent front-facet interface recombination velocity