Recent Progress in Development of GaInNAs- Based Photonic Devices

The GaInNAs/GaAs semiconductor heterostructures have emerged as promising alternatives to InP-based compound semiconductors for the fabrication of 1.3-mum METRO and LAN telecommunications lasers. We shall review the recent advances made in the field of the GaInNAs technology. An emphasis is put on t...

Full description

Saved in:
Bibliographic Details
Main Authors: Konttinen, J., Tuomisto, P., Guina, M., Pessa, M.
Format: Conference Proceeding
Language:English
Subjects:
GaInNAs
Gallium arsenide
Local area networks
Molecular beam epitaxial growth
molecular beam epitaxy
optical communication
Optical device fabrication
polarization switch
Quantum well lasers
Semiconductor lasers
Semiconductor waveguides
Threshold current
Waveguide lasers
Wavelength measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The GaInNAs/GaAs semiconductor heterostructures have emerged as promising alternatives to InP-based compound semiconductors for the fabrication of 1.3-mum METRO and LAN telecommunications lasers. We shall review the recent advances made in the field of the GaInNAs technology. An emphasis is put on the development of low-threshold double-quantum-well (DQW) and triple-quantum-well (TQW) ridge waveguide lasers (RWG) grown by molecular beam epitaxy. A record slope efficiency of 0.28 W/A and a low threshold current density of 278 A/cm 2 /QW are demonstrated in this paper for the TQW single-mode lasers. We shall also discuss the first measurements of electron-spin relaxation in dilute nitride quantum-wells. Excitation of spin-polarized electrons is potentially attractive for implementing all-optical polarization switches in a broad wavelength range
ISSN:2162-7339
DOI:10.1109/ICTON.2006.248371