20W GaN HPAs for Next Generation X-Band T/R-Modules

High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key e...

Full description

Saved in:
Bibliographic Details
Main Authors: Schuh, P., Leberer, R., Sledzik, H., Oppermann, M., Adelseck, B., Brugger, H., Behtash, R., Leier, H., Quay, R., Kiefer, R.
Format: Conference Proceeding
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Antenna arrays
Gallium nitride
HEMTs
High power amplifier
High power amplifiers
Hybrid integrated circuits
MMICs
Monolithic integrated circuits
Power generation
Silicon carbide
Substrates
T/R-Module
X-band
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains. Based on hybrid designs excellent peak power levels of 23 W (43.6 dBm) with an associated power added efficiency (PAE) of 29% are realized. Over a bandwidth of 2 GHz (X-band) the output power levels are above 20 W. In a more sophisticated approach first monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 20 W (43 dBm) with an associated PAE of 30% are measured on small size 12 mm 2 chips. Highest ever reported maximum power added efficiency values of up to 36.5% are achieved
ISSN:0149-645X
DOI:10.1109/MWSYM.2006.249736