W-Band Oscillator on Metamorphic HEMT

We present for the first time an un-buffered W-band oscillator on a metamorphic HEMT GaAs substrate. The oscillator has an output power of +1.5 dBm and a phase noise of -101 dBc/Hz at a 1 MHz offset. This oscillator will be part of an integrated monolithic front end

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Bibliographic Details
Main Authors: Kirby, P.L., Herrick, K., Alm, R., Luque, N.A., Rodriguez, A., Dunleavy, L.P., Papapolymerou, J.
Format: Conference Proceeding
Language:English
Subjects:
Acoustic reflection
FETs
Frequency
front end
Gallium arsenide
HEMT
Indium phosphide
Metamorphic HEMT
mHEMTs
Microwave oscillators
millimeter wave
Oscillator
Phase noise
Power generation
Substrates
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Description
Summary:We present for the first time an un-buffered W-band oscillator on a metamorphic HEMT GaAs substrate. The oscillator has an output power of +1.5 dBm and a phase noise of -101 dBc/Hz at a 1 MHz offset. This oscillator will be part of an integrated monolithic front end
ISSN:0149-645X
DOI:10.1109/MWSYM.2006.249757