Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP

This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this...

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Bibliographic Details
Main Authors: Chitrashekaraiah, S., Van Tuyen Vo, Rezazadeh, A.A.
Format: Conference Proceeding
Language:English
Subjects:
Double heterojunction bipolar transistors
Electromagnetic modeling
Equivalent circuits
Frequency
Gallium arsenide
Heterojunction bipolar transistors
Linear approximation
Parameter extraction
Physics
Semiconductor device modeling
Signal design
Temperature dependence
Thermal factors
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Summary:This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this data. For the first time the conventional T-topology is extended to predict temperature behavior based on the linear expressions. Excellent agreement between measured and simulated data was observed
ISSN:0149-645X
DOI:10.1109/MWSYM.2006.249953