Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP

This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this...

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Main Authors: Chitrashekaraiah, S., Van Tuyen Vo, Rezazadeh, A.A.
Format: Conference Proceeding
Language:English
Subjects:
Double heterojunction bipolar transistors
Electromagnetic modeling
Equivalent circuits
Frequency
Gallium arsenide
Heterojunction bipolar transistors
Linear approximation
Parameter extraction
Physics
Semiconductor device modeling
Signal design
Temperature dependence
Thermal factors
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Van Tuyen Vo
Rezazadeh, A.A.
description This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this data. For the first time the conventional T-topology is extended to predict temperature behavior based on the linear expressions. Excellent agreement between measured and simulated data was observed
doi_str_mv 10.1109/MWSYM.2006.249953
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Double heterojunction bipolar transistors
Electromagnetic modeling
Equivalent circuits
Frequency
Gallium arsenide
Heterojunction bipolar transistors
Linear approximation
Parameter extraction
Physics
Semiconductor device modeling
Signal design
Temperature dependence
Thermal factors
title Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP
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