Further Suppression of Surface-Recombination of an InGaP/GaAs HBT by Conformal Passivation

Conformal passivation on an InGaP/GaAs HBT with significant reduction in the base surface-recombination effect is demonstrated. Not only dc behaviors but also RF performances are remarkably improved compared with the conventional emitter-ledge structure. Based on the conformal passivation, i.e., the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-12, Vol.53 (12), p.2901-2907
Main Authors: Fu, Ssu-I, Cheng, Shiou-Ying, Chen, Tzu-Pin, Lai, Po-Hsien, Hung, Ching-Wen, Chu, Kuei-Yi, Chen, Li-Yang, Liu, Wen-Chau
Format: Article
Language:English
Subjects:
(\hbox{NH}_{4})_{2}\hbox{S}_{X}
Applied sciences
Base surface-recombination current
Current density
Electronics
Exact sciences and technology
Gallium arsenide
ledge
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
sheet resistance
specific contact resistance
Sulfur
sulfur passivation
Surface resistance
Temperature
Transistors
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Summary:Conformal passivation on an InGaP/GaAs HBT with significant reduction in the base surface-recombination effect is demonstrated. Not only dc behaviors but also RF performances are remarkably improved compared with the conventional emitter-ledge structure. Based on the conformal passivation, i.e., the base surface is covered by the depleted InGaP ledge structure and sulfur ((NH 4 ) 2 S x ) treatment, lower base surface-recombination current density, lower specific contact resistance, lower sheet resistance, higher current gain, higher collector current, and higher maximum oscillation frequency are obtained
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.885094