Microwave Amplification Using Space Charge Waves in Strained Si/SiGe Heterostructures at 77K

Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplifi...

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Bibliographic Details
Main Authors: Garcia-B, A., Grimalsky, V., Gutierrez, E.A.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Conductivity
Electron mobility
Frequency
Germanium silicon alloys
Microwave antennas
Poisson equations
Silicon germanium
Space charge
Surface waves
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Summary:Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification of space charge waves in a strained Si/SiGe heterostructure up to a frequency f of 40 GHz
ISSN:2165-3542
DOI:10.1109/ICCDCS.2006.250858