Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique

Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stre...

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Bibliographic Details
Main Authors: Cheng, C.C., Tu, K.C., Tahui Wang, Hsieh, T.S., Tzeng, J.T., Jong, Y.C., Liou, R.S., Pan, S.C., Hsu, S.L.
Format: Conference Proceeding
Language:English
Subjects:
Charge pumping
Charge pumps
CMOS process
CMOS technology
Current measurement
Degradation
Frequency measurement
Hot carriers
LDMOS
Oxide damage regions
Stress
Switches
Threshold voltage
trap density
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Summary:Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N it ) generation in the channel region and negative bulk oxide charge (Q ox ) creation in the bird's beak region. The density of N it and Q ox can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251239