Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance

By inserting thin WSi x layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of transistor. This insertion also could prevent the formation of Si-N dielectric laye...

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Bibliographic Details
Main Authors: Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Hong-Seon Yang, Kwangok Kim, Noh-Jung Kwak, Hyun-Chul Sohn, Jin Woong Kim
Format: Conference Proceeding
Language:English
Subjects:
Chemical vapor deposition
Contact resistance
Electrodes
MOS capacitors
MOSFET circuits
Pattern analysis
Random access memory
Stress
Tin
Tungsten
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Summary:By inserting thin WSi x layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of transistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251247