A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materials tested during this study included: SiOF (k=3.6)...

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Bibliographic Details
Main Authors: Jinyoung Kim, Ogawa, E.T., McPherson, J.W.
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
BEOL
Breakdown
Dielectric breakdown
Dielectric constant
Dielectric materials
Electric breakdown
Extrapolation
Field Acceleration Parameter
Life estimation
Low-k Dielectric
Materials testing
Reliability
Statistical analysis
Statistical distributions
TDDB
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Description
Summary:Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materials tested during this study included: SiOF (k=3.6), SiOCl (k=2.9), SiOC2 (k=2.6) and MSQ (k=2.3). While a strong material-dependence was found for the breakdown strength and time-to-failure, all of these silica-based materials tested at 105degC were observed to have a similar field acceleration parameter of gamma = 4.13 +/- 0.85 cm/MV
ISSN:1541-7026
DOI:10.1109/RELPHY.2006.251265