Retention Reliability of FinFET SONOS Device

This paper presents the retention reliability of the FinFET SONOS flash memory. By understanding the charge loss mechanisms of the SONOS structure, a new approach for the prediction of long term retention lifetime have been proposed. The comparison between the thermal-accelerated and field-accelerat...

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Bibliographic Details
Main Authors: Jong Jin Lee, Se Hoon Lee, Heesoon Chae, Byung Yong Choi, Suk-Kang Sung, Seok Pil Kim, Eun Suk Cho, Choong Ho Lee, Donggun Park
Format: Conference Proceeding
Language:English
Subjects:
Acceleration
Cities and towns
Electrons
field acceleration
FinFET
FinFETs
Flash memory
Life estimation
lifetime
Lifetime estimation
retention
SONOS
SONOS devices
Temperature
thermal acceleration
Tunneling
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Summary:This paper presents the retention reliability of the FinFET SONOS flash memory. By understanding the charge loss mechanisms of the SONOS structure, a new approach for the prediction of long term retention lifetime have been proposed. The comparison between the thermal-accelerated and field-accelerated lifetime has been demonstrated
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251274