A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application

This paper compares design concepts of 63nm-8Gb and 90nm-4Gb multilevel cell (MLC) NAND flash memory. For 8Gb MLC NAND flash memory, locations of peripheral circuits and charge pumps are determined to optimize area and signal speed. Page buffer is simplified by reducing the number of transistors wit...

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Main Authors: Dae-Seok Byeon, Sung-Soo Lee, Young-Ho Lim, Dongku Kang, Wook-Kee Han, Dong-Hwan Kim, Kang-Deog Suh
Format: Conference Proceeding
Language:English
Subjects:
Cellular phones
Charge pumps
Circuit noise
Consumer electronics
Costs
Digital cameras
Error correction codes
Flash memory
Packaging
Universal Serial Bus
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creator Dae-Seok Byeon
Sung-Soo Lee
Young-Ho Lim
Dongku Kang
Wook-Kee Han
Dong-Hwan Kim
Kang-Deog Suh
description This paper compares design concepts of 63nm-8Gb and 90nm-4Gb multilevel cell (MLC) NAND flash memory. For 8Gb MLC NAND flash memory, locations of peripheral circuits and charge pumps are determined to optimize area and signal speed. Page buffer is simplified by reducing the number of transistors with minimal connections thereby resulting in smaller size. Performance is improved by using fast-read/write cycle and reduced signal paths. Furthermore, two-MAT-cell-array architecture is used for 2times read/write operations. Various techniques are used to suppress noisy effects such as common source line (CSL) noise and floating-gate-coupling noise
doi_str_mv 10.1109/ASSCC.2005.251777
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subjects Cellular phones
Charge pumps
Circuit noise
Consumer electronics
Costs
Digital cameras
Error correction codes
Flash memory
Packaging
Universal Serial Bus
title A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application
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