Low Power 60 dB Gain Range with 0.25 dB Resolution CMOS RF Programmable Gain Amplifier for Dual-band DAB/T-DMB Tuner IC

• Main Authors: Tae Wook Kim, Bonkee Kim, Youngho Cho, Seyeob Kim, Boeun Kim, Kwyro Lee
• Format: Conference Proceeding
• Language: English
• Subjects: CMOS; CMOS digital integrated circuits; CMOS integrated circuits; CMOS process; DAB; Dual band; Gain; IIP3; L-band; Linearity; PGA; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Tuners
• DOI: 10.1109/ASSCC.2005.251683

Low power CMOS RF digitally programmable gain amplifiers for dual-band (Band-III and L-Band) DAB/T-DMB receiver IC are implemented using 0.18 mum CMOS process. For a stable operation among large interference situation, it is required to have wide gain range and fine resolution in RF domain. In order to meet such requirements, various programmable gain amplifier architectures are proposed. Also employing a differential multiple gated transistor (DMGTR) technique which is a differential circuit gm" cancellation method, maximum 22 dB IIP3 improvement is obtained. The IC exhibits 60 dB gain range with 0.25 dB resolution, 2.7 dB NF, -14 dBm IIP3 and 42 dB voltage gain at 22 mW power consumption for L-Band case, 50 dB gain range with 0.25 dB resolution, 3 dB NF, -5 dBm IIP3 and 28 dB voltage gain for Band-III case at 16mW power consumption