Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure

The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied

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Bibliographic Details
Main Authors: Borzdov, A.V., Pozdnyakov, D.V., Galenchik, V.O., Borzdov, V.M.
Format: Conference Proceeding
Language:English
Subjects:
Electrons
Gallium arsenide
Rough surfaces
Scattering
Surface roughness
Online Access:Request full text
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Description
Summary:The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied
DOI:10.1109/CRMICO.2006.256145