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Analysis of HBM-ESD current rise time and its deciding factors

Circuit model of ESD test circumstance is established. By inverse Laplace transform, analytical expression of current is got. Then we obtain simulation of current rise time (t r ) under different combination of circuit parameters. A few fitted polynomials that describe the relationship of t r to the...

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Bibliographic Details
Main Authors: Zhou Feng, Huang Jiusheng, Gao Yougang, Liu Sulin, Wang Xiqing, Wang Langfeng
Format: Conference Proceeding
Language:English
Subjects:
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Summary:Circuit model of ESD test circumstance is established. By inverse Laplace transform, analytical expression of current is got. Then we obtain simulation of current rise time (t r ) under different combination of circuit parameters. A few fitted polynomials that describe the relationship of t r to these parameters are got, whose accuracy is also analyzed
DOI:10.1109/CEEM.2006.258012