Electron-Induced Displacement Damage Effects in CCDs

We compare differences in parametric degradation for CCDs irradiated to the same displacement damage dose with 2-MeV, 10-MeV, and 50-MeV electrons. Charge transfer efficiency degradation was observed to not scale well with non-ionizing energy loss (NIEL) for small signals. Short term annealing of me...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3764-3770
Main Authors: Becker, H.N., Elliott, T., Alexander, J.W.
Format: Article
Language:English
Subjects:
Annealing
CCD
Charge coupled devices
Charge transfer
Damage
Dark current
Degradation
Displacement
displacement damage
Electrons
Energy (nuclear)
Irradiation
Neutrons
Propulsion
Protons
Temperature
Testing
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Summary:We compare differences in parametric degradation for CCDs irradiated to the same displacement damage dose with 2-MeV, 10-MeV, and 50-MeV electrons. Charge transfer efficiency degradation was observed to not scale well with non-ionizing energy loss (NIEL) for small signals. Short term annealing of mean dark current in a CCD sample irradiated with 2-MeV electrons at -85C is discussed, as well as additional annealing achieved by warming to temperatures up to and including room temperature. In contrast, charge transfer inefficiency was not observed to anneal following room temperature cycling for the sample irradiated at -85C
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.886208