Silicon direct bonding (SDB)-a substrate material for electronic devices

A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200/spl deg/C, annealing was carried out at temperatures ranging from 600/spl deg/C to 1180/spl deg/C for times between 30 minutes and 20...

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Bibliographic Details
Main Authors: Wiget, R., Pecz, B., Burte, E.P.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Bonding processes
Cleaning
Contacts
Electric breakdown
P-i-n diodes
Silicon
Substrates
Temperature distribution
Wafer bonding
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Summary:A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200/spl deg/C, annealing was carried out at temperatures ranging from 600/spl deg/C to 1180/spl deg/C for times between 30 minutes and 20 hours. Bare silicon and oxidized wafers were bonded. The electrical specification was done by evaluating the I-V characteristics with respect to breakdown, reverse current, ideality factor and series and parallel resistance (R/sub s/, R/sub p/). A strong dependence of R/sub s/ and R/sub p/ on bonding temperature and time was observed. In order to prove the viability of the bonded substrate for power devices, the authors fabricated p-i-n diodes. The diodes exhibit breakdown voltages up to 1400 V and forward current densities of 2 A/mm/sup 2/. These p-i-n diodes were superior to diodes fabricated simultaneously on epitaxial material.< >
DOI:10.1109/PEDS.1995.404944