Silicon direct bonding (SDB)-a substrate material for electronic devices

A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200/spl deg/C, annealing was carried out at temperatures ranging from 600/spl deg/C to 1180/spl deg/C for times between 30 minutes and 20...

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Main Authors: Wiget, R., Pecz, B., Burte, E.P.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Bonding processes
Cleaning
Contacts
Electric breakdown
P-i-n diodes
Silicon
Substrates
Temperature distribution
Wafer bonding
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Pecz, B.
Burte, E.P.
description A silicon direct bonding process was developed using a special chamber for cleaning, contacting and prebonding wafers up to 100 mm. After prebonding the wafers at 200/spl deg/C, annealing was carried out at temperatures ranging from 600/spl deg/C to 1180/spl deg/C for times between 30 minutes and 20 hours. Bare silicon and oxidized wafers were bonded. The electrical specification was done by evaluating the I-V characteristics with respect to breakdown, reverse current, ideality factor and series and parallel resistance (R/sub s/, R/sub p/). A strong dependence of R/sub s/ and R/sub p/ on bonding temperature and time was observed. In order to prove the viability of the bonded substrate for power devices, the authors fabricated p-i-n diodes. The diodes exhibit breakdown voltages up to 1400 V and forward current densities of 2 A/mm/sup 2/. These p-i-n diodes were superior to diodes fabricated simultaneously on epitaxial material.< >
doi_str_mv 10.1109/PEDS.1995.404944
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After prebonding the wafers at 200/spl deg/C, annealing was carried out at temperatures ranging from 600/spl deg/C to 1180/spl deg/C for times between 30 minutes and 20 hours. Bare silicon and oxidized wafers were bonded. The electrical specification was done by evaluating the I-V characteristics with respect to breakdown, reverse current, ideality factor and series and parallel resistance (R/sub s/, R/sub p/). A strong dependence of R/sub s/ and R/sub p/ on bonding temperature and time was observed. In order to prove the viability of the bonded substrate for power devices, the authors fabricated p-i-n diodes. The diodes exhibit breakdown voltages up to 1400 V and forward current densities of 2 A/mm/sup 2/. These p-i-n diodes were superior to diodes fabricated simultaneously on epitaxial material.&lt; &gt;</description><identifier>ISBN: 0780324234</identifier><identifier>ISBN: 9780780324237</identifier><identifier>DOI: 10.1109/PEDS.1995.404944</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Bonding processes ; Cleaning ; Contacts ; Electric breakdown ; P-i-n diodes ; Silicon ; Substrates ; Temperature distribution ; Wafer bonding</subject><ispartof>Proceedings of 1995 International Conference on Power Electronics and Drive Systems. 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ispartof Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95, 1995, p.75-81 vol.1
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Annealing
Bonding processes
Cleaning
Contacts
Electric breakdown
P-i-n diodes
Silicon
Substrates
Temperature distribution
Wafer bonding
title Silicon direct bonding (SDB)-a substrate material for electronic devices
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