Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

An electron effective mass (m e *) of (0.11plusmn0.015)m 0 is experimentally determined in high indium content InGaAsN quantum well. The impact of the large m e * in the material differential gain is analyzed through a gain model

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Bibliographic Details
Main Authors: Xu, L., Patel, D., Menoni, C.S., Yeh, J.-Y., Huang, J.Y.T., Mawst, L.J., Tansu, N.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Effective mass
Electrons
Excitons
Gallium arsenide
Indium gallium arsenide
Nitrogen
Quantum computing
Temperature
Tensile strain
Online Access:Request full text
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Description
Summary:An electron effective mass (m e *) of (0.11plusmn0.015)m 0 is experimentally determined in high indium content InGaAsN quantum well. The impact of the large m e * in the material differential gain is analyzed through a gain model
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2006.278835