An 8×8 Switch Matrix MMIC Integrating Eight InP-HEMT SP8T Switches for 10-Gbit/s Systems

An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to co...

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Bibliographic Details
Main Authors: Kamitsuna, H., Yamane, Y., Tokumitsu, M., Sugahara, H., Enoki, T.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
FET switches
HEMTs
Indium phosphide
InP HEMT
Isolation technology
MMIC switches
MMICs
MODFETs
Nonhomogeneous media
switch matrix
Switches
Transmission line matrix methods
Wideband
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Summary:An 8times8 switch matrix MMIC using cold-FET SP8T switches is presented. InP HEMTs with a low RonmiddotCoff product enable us to construct a dc-to-over-10-GHz SP8T switch in a series configuration. The multilayer interconnection with top-metal- and dielectric-layer thickness of 5 mum allows us to configure interconnection transmission lines quite compactly, which is essential for wideband operation. The switch matrix IC using these technologies with a novel size-reduction technique is as small as 0.4 mm 2 (core area) and achieves low insertion loss (26.5 dB) below 10 GHz. We confirmed error-free operation up to 12.5 Gbit/s with good eye openings even when eight data signals are simultaneously input to the switch IC
DOI:10.1109/EMICC.2006.282807