Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop...

Full description

Saved in:
Bibliographic Details
Main Authors: Benbakhti, B., Rousseau, M., De Jaeger, J.C.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
AlGaN/GaN HEMTs
Aluminum gallium nitride
Field Plate
Frequency
Gallium nitride
HEMTs
Hydrodynamic Model
Hydrodynamics
Microwave devices
Microwave transistors
MODFETs
Poisson equations
Topology
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance
DOI:10.1109/EMICC.2006.282657