Compact K-band Watt-level GaAs PHEMT Power Amplifier MMIC with integrated ESD protection

The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupyi...

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Bibliographic Details
Main Authors: Bessemoulin, A., McCulloch, M.G., Alexander, A., McCann, D., Mahon, S.J., Harvey, J.T.
Format: Conference Proceeding
Language:English
Subjects:
Circuit testing
Electrostatic discharge
Gallium arsenide
K-band
MMICs
PHEMTs
Power amplifiers
Protection
Radio frequency
Radiofrequency amplifiers
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Summary:The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm 2 , this 3-stage power amplifier achieves a linear gain of more than 20-dB over the 17 to 24 GHz frequency range with 6-dB noise figure. It also delivers a CW output power of more than 29-and 30-dBm, in the 17-20 GHz band, at 5- and 6-V respectively. Preliminary ESD characterization shows the circuit withstands 180-V in human body model test (tester limit), and 100-V machine model (equivalent to at least 500-V HBM), without DC or RF performance degradation. Finally, performance in standard 24-lead plastic QFN package (4times4 mm 2 ) is presented: the device exhibits more than 17.5-dB linear gain over 17-24 GHz, with P -.1dB greater than 28-dBm in the 17.7-19.7 GHz radio range
DOI:10.1109/EMICC.2006.282697