Microwave p-i-n diodes and switches based on 4H-SiC

4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and 150 mum, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 Omega, a capacitance below 0.5 pF at a punchthrough volt...

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Bibliographic Details
Main Authors: Zekentes, K., Camara, N., Konstantinidis, G., Romanov, L.P., Kirillov, A.V., Boltovets, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
Fabrication
Gallium arsenide
insertion loss
isolation
Microwave modulators
p-i-n diode
P-i-n diodes
Packaging
Power semiconductor switches
Semiconductor diodes
Silicon carbide
switches
Temperature
Voltage
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Summary:4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and 150 mum, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-3 Omega, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, are demonstrated for the first time. The switches exhibited insertion loss as low as 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns
DOI:10.1109/EUMC.2006.281209