Photoconverters for Solar TPV Systems

In this work, LPE, MOCVD and Zn-diffusion techniques for GaSb, InGaAsSb and GaAs/Ge structures were applied for manufacturing the thermophotovoltaic (TPV) cells. Studies of the cells were carried out by a flash tester as well as under SiC and tungsten emitters, heated by radiation from a high power...

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Bibliographic Details
Main Authors: Khvostikov, V.P., Khvostikova, O.A., Gazaryan, P.Y., Sorokina, S.V., Potapovich, N.S., Malevskaya, A.V., Shvarts, M.Z., Kaluzhniy, N.A., Andreev, V.M., Rumyantsev, V.D.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Circuit testing
Gallium arsenide
Lamps
Manufacturing
MOCVD
Silicon carbide
Solar heating
Tungsten
Xenon
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Summary:In this work, LPE, MOCVD and Zn-diffusion techniques for GaSb, InGaAsSb and GaAs/Ge structures were applied for manufacturing the thermophotovoltaic (TPV) cells. Studies of the cells were carried out by a flash tester as well as under SiC and tungsten emitters, heated by radiation from a high power xenon lamp in a concentrated sunlight simulator. Maximum short circuit current density of 9-10 A/cm 2 has been achieved in the cells
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279543