Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging

Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping arti...

Full description

Saved in:
Bibliographic Details
Main Authors: Bardos, R.A., Cotter, J., Trupke, T., Lorenz, A.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier lifetime
Crystalline materials
High-resolution imaging
Lifetime estimation
Lighting
Monitoring
Passivation
Photoluminescence
Photovoltaic cells
Silicon compounds
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 1206
container_issue
container_start_page 1203
container_title
container_volume 1
creator Bardos, R.A.
Cotter, J.
Trupke, T.
Lorenz, A.
description Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping artifacts, which can dominate lifetime measurements made by other methods on multicrystalline materials at low and moderate injection levels. We observe that after the light phosphorous diffusion step, the average minority carrier lifetime in the p-type samples is significantly lower than in the n-type samples, with considerable continuity of good and bad grains along the growth direction in both n-type and p-type samples. Striking differences are also found in the effect of SiN passivation on n-type and p-type wafers
doi_str_mv 10.1109/WCPEC.2006.279397
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_4059852</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4059852</ieee_id><sourcerecordid>4059852</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-fadb1ebf01807a2eb12828a7b986c512ce53f6a1244381b70e1ee3c575a9ee183</originalsourceid><addsrcrecordid>eNpFj91KAzEUhCMq2FYfQLzJC2w9J9lsspey1FqoWrTSy5Jsz7aR_WOzpfTtXVDwapj5hoFh7B5higjp4yZbzbKpAEimQqcy1RdsjLGIYwDUePlvEnnFRoNAZKTGGzYO4RtAgExwxA5ZU7W286GpeVPwN27rHV_x9bkl_uGdG-J515xq_nosex9l3Tn0tix9TfzTlz4f-MYW1AV-DL7e89Wh6ZvyWA2FkFOdE19Udj-QW3Zd2DLQ3Z9O2NfzbJ29RMv3-SJ7WkYeteqjwu4ckisADWgryKEwwljtUpPkCkVOShaJxeGaNOg0EBLJXGllUyI0csIefnc9EW3bzle2O29jUKlRQv4AAaRZbA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging</title><source>IEEE Xplore All Conference Series</source><creator>Bardos, R.A. ; Cotter, J. ; Trupke, T. ; Lorenz, A.</creator><creatorcontrib>Bardos, R.A. ; Cotter, J. ; Trupke, T. ; Lorenz, A.</creatorcontrib><description>Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping artifacts, which can dominate lifetime measurements made by other methods on multicrystalline materials at low and moderate injection levels. We observe that after the light phosphorous diffusion step, the average minority carrier lifetime in the p-type samples is significantly lower than in the n-type samples, with considerable continuity of good and bad grains along the growth direction in both n-type and p-type samples. Striking differences are also found in the effect of SiN passivation on n-type and p-type wafers</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 1424400163</identifier><identifier>ISBN: 9781424400164</identifier><identifier>EISBN: 1424400171</identifier><identifier>EISBN: 9781424400171</identifier><identifier>DOI: 10.1109/WCPEC.2006.279397</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier lifetime ; Crystalline materials ; High-resolution imaging ; Lifetime estimation ; Lighting ; Monitoring ; Passivation ; Photoluminescence ; Photovoltaic cells ; Silicon compounds</subject><ispartof>2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.1203-1206</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4059852$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4059852$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bardos, R.A.</creatorcontrib><creatorcontrib>Cotter, J.</creatorcontrib><creatorcontrib>Trupke, T.</creatorcontrib><creatorcontrib>Lorenz, A.</creatorcontrib><title>Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging</title><title>2006 IEEE 4th World Conference on Photovoltaic Energy Conference</title><addtitle>WCPEC</addtitle><description>Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping artifacts, which can dominate lifetime measurements made by other methods on multicrystalline materials at low and moderate injection levels. We observe that after the light phosphorous diffusion step, the average minority carrier lifetime in the p-type samples is significantly lower than in the n-type samples, with considerable continuity of good and bad grains along the growth direction in both n-type and p-type samples. Striking differences are also found in the effect of SiN passivation on n-type and p-type wafers</description><subject>Charge carrier lifetime</subject><subject>Crystalline materials</subject><subject>High-resolution imaging</subject><subject>Lifetime estimation</subject><subject>Lighting</subject><subject>Monitoring</subject><subject>Passivation</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Silicon compounds</subject><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><isbn>1424400171</isbn><isbn>9781424400171</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFj91KAzEUhCMq2FYfQLzJC2w9J9lsspey1FqoWrTSy5Jsz7aR_WOzpfTtXVDwapj5hoFh7B5higjp4yZbzbKpAEimQqcy1RdsjLGIYwDUePlvEnnFRoNAZKTGGzYO4RtAgExwxA5ZU7W286GpeVPwN27rHV_x9bkl_uGdG-J515xq_nosex9l3Tn0tix9TfzTlz4f-MYW1AV-DL7e89Wh6ZvyWA2FkFOdE19Udj-QW3Zd2DLQ3Z9O2NfzbJ29RMv3-SJ7WkYeteqjwu4ckisADWgryKEwwljtUpPkCkVOShaJxeGaNOg0EBLJXGllUyI0csIefnc9EW3bzle2O29jUKlRQv4AAaRZbA</recordid><startdate>200605</startdate><enddate>200605</enddate><creator>Bardos, R.A.</creator><creator>Cotter, J.</creator><creator>Trupke, T.</creator><creator>Lorenz, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200605</creationdate><title>Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging</title><author>Bardos, R.A. ; Cotter, J. ; Trupke, T. ; Lorenz, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-fadb1ebf01807a2eb12828a7b986c512ce53f6a1244381b70e1ee3c575a9ee183</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Charge carrier lifetime</topic><topic>Crystalline materials</topic><topic>High-resolution imaging</topic><topic>Lifetime estimation</topic><topic>Lighting</topic><topic>Monitoring</topic><topic>Passivation</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Silicon compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Bardos, R.A.</creatorcontrib><creatorcontrib>Cotter, J.</creatorcontrib><creatorcontrib>Trupke, T.</creatorcontrib><creatorcontrib>Lorenz, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bardos, R.A.</au><au>Cotter, J.</au><au>Trupke, T.</au><au>Lorenz, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging</atitle><btitle>2006 IEEE 4th World Conference on Photovoltaic Energy Conference</btitle><stitle>WCPEC</stitle><date>2006-05</date><risdate>2006</risdate><volume>1</volume><spage>1203</spage><epage>1206</epage><pages>1203-1206</pages><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><eisbn>1424400171</eisbn><eisbn>9781424400171</eisbn><abstract>Photoluminescence imaging is used to compare similarly grown n-type and p-type string ribbon mc-Si wafers at two stages of solar cell processing. Key advantages of the PL imaging technique are that it is fast, contact-less, requires no sample preparation and is negligibly influenced by trapping artifacts, which can dominate lifetime measurements made by other methods on multicrystalline materials at low and moderate injection levels. We observe that after the light phosphorous diffusion step, the average minority carrier lifetime in the p-type samples is significantly lower than in the n-type samples, with considerable continuity of good and bad grains along the growth direction in both n-type and p-type samples. Striking differences are also found in the effect of SiN passivation on n-type and p-type wafers</abstract><pub>IEEE</pub><doi>10.1109/WCPEC.2006.279397</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0160-8371
ispartof 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.1203-1206
issn 0160-8371
language eng
recordid cdi_ieee_primary_4059852
source IEEE Xplore All Conference Series
subjects Charge carrier lifetime
Crystalline materials
High-resolution imaging
Lifetime estimation
Lighting
Monitoring
Passivation
Photoluminescence
Photovoltaic cells
Silicon compounds
title Comparison of N and P Type Ribbon Grown Multi-Crystalline Silicon Wafers using Photoluminescence Imaging
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T22%3A23%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Comparison%20of%20N%20and%20P%20Type%20Ribbon%20Grown%20Multi-Crystalline%20Silicon%20Wafers%20using%20Photoluminescence%20Imaging&rft.btitle=2006%20IEEE%204th%20World%20Conference%20on%20Photovoltaic%20Energy%20Conference&rft.au=Bardos,%20R.A.&rft.date=2006-05&rft.volume=1&rft.spage=1203&rft.epage=1206&rft.pages=1203-1206&rft.issn=0160-8371&rft.isbn=1424400163&rft.isbn_list=9781424400164&rft_id=info:doi/10.1109/WCPEC.2006.279397&rft.eisbn=1424400171&rft.eisbn_list=9781424400171&rft_dat=%3Cieee_CHZPO%3E4059852%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-fadb1ebf01807a2eb12828a7b986c512ce53f6a1244381b70e1ee3c575a9ee183%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4059852&rfr_iscdi=true