Development of Localized Plasma Confinement (LPC) CVD method for high rate and uniform deposition of thin-film crystalline Si

A Localized Plasma Confinement (LPC) CVD method was newly developed. The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films...

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Bibliographic Details
Main Authors: Matsumoto, M., Kawamoto, K., Mishima, T., Haku, H., Shima, M., Terakawa, A., Tanaka, M.
Format: Conference Proceeding
Language:English
Subjects:
Cathodes
Crystallization
Electrodes
Linear predictive coding
Photovoltaic cells
Plasma confinement
Plasma stability
Semiconductor thin films
Sputtering
Substrates
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Summary:A Localized Plasma Confinement (LPC) CVD method was newly developed. The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films with very high deposition rates and very high gas utilization efficiencies by using LPC-CVD. The maximum deposition rates of 4.1 nm/s for muc-Si and 5.7 nm/s for a-Si have been also achieved. This method is expected to be effective for larger-area deposition
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279787