Incorporation of Higher-Order Silane Radicals Into A-Si:H Films of High Stability Against Light Exposure

We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter refer...

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Bibliographic Details
Main Authors: Shiratani, M., Iwashita, S., Bando, K., Inoue, T., Koga, K.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Degradation
Density measurement
Electrodes
Hydrogen
Inductors
Mass spectroscopy
Plasma measurements
Plasma stability
Semiconductor films
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Summary:We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si 2 H 5 and Si 3 H 7 densities there
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279791