Current Transport in ZnO/Si Heterojunctions for Low-Cost Solar Cells

Thin film ZnO/Si structures are being studied as candidates for low cost solar cells. Total film thickness was about 5 microns. Crystallinity of both films was verified by X-ray diffraction. Photoluminescence spectroscopy showed a very strong peak to verify the crystallinity of the ZnO. ZnO films we...

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Bibliographic Details
Main Authors: Yen, T., Li, M., Chokshi, N., DeLeon, R.L., Kim, J., Tompa, G., Anderson, W.A.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Crystallization
Hall effect
Heterojunctions
Photoluminescence
Photovoltaic cells
Semiconductor thin films
Spectroscopy
X-ray diffraction
Zinc oxide
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Summary:Thin film ZnO/Si structures are being studied as candidates for low cost solar cells. Total film thickness was about 5 microns. Crystallinity of both films was verified by X-ray diffraction. Photoluminescence spectroscopy showed a very strong peak to verify the crystallinity of the ZnO. ZnO films were studied for Hall effect mobility to reveal values of up to 200 cm 2 /V-s. In some cases, laser annealing was used to modify the ZnO films. Device structures were completed using the designs of metal/p-Si wafer, metal/ MIG-Si, and metal/ZnO/MIG-Si. These were chosen to evaluate current transport of the MIG-Si and the ZnO/MIG-Si interface. I-V-T data from 150degC to 425degC revealed quite different behaviors for the 3 designs. Conduction mechanisms included thermionic emission, recombination, space charge limited current (SCLC) due to a single trap and SCLC due to an exponential distribution of traps, seen for the ZnO/MIG-Si case
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279806